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K. Suga, N. Koshizaki, K. Yasumoto, and E. Smela
[Sensors and Actuators B, Vol.13-14, pp.598-599, 1993]
The gas-sensing characteristics of junction structures composed of Al_{2}O_{3}-doped ZnO, NiO and an intervening ultrathin SiO_{2} layer at the junction interface as shown in Fig.1 were investigated. An ultrathin intervening SiO_{2} layer 30-60 nm thick at the junction interface gives high NO sensitivity and fast response time. A suitable combination of component and intervening layer thicknesses is important to obtain higher NO sensitivity.
