Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ²H Nuclear Magnetic Resonance

S. Hayashi, S. Yamasaki, and A. Matsuda
[Jpn. J. Appl. Phys., Vol.33, pp.5668-5670, 1994]

²H nuclear magnetic resonance (NMR) spectra have been measured for deuterated amorphous silicon deposited at substrate temperatures from ambient to 400C°, as shown in Fig.1. Concentrations of four kinds of deuteron bonding states are determined; SiD and SiD₂ in a rigid state, SiD₃ in a freely rotating state, D₂ molecules in a freely mobile state, and SiD_n(n=1,2,and 3) with bond angle distortions in a constrained mobile state. The former three decrease with the substrate temperature, while the last increases.