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Self-Developing Characteristics of Si Containing Polymers and Their Application to X-ray Lithography

A. Yamaguchi, T. Ogawa, H. Tachibana, H. Oizumi, T. Soga,
M. Matsumoto, T. Matsuzaka, and E. Takeda
[J. Electrochem. Soc., Vol. 143, No. 2, pp. 657-665, 1996]

The self-development characteristics of Si containing polymers were investigated with the aim of applying these polymers to the surface-imaging process in X-ray lithography. UV and FT-IR spectra were used to study the reaction of the polymers to soft X-rays. The polymers exhibited positive-tone characteristics when exposed to X-rays. Their self-development sensitivity and oxygen reactive ion etching resistance were measured to estimate the feasibility of their use in lithography.

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