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Recovery of Stoichiometry of Ta2O5 Prepared by KrF Excimer Laser CVD from Tantalum Methoxide Using Microwave Discharge of Oxygen Gas

A. Watanabe, M. Mukaida, K. Osato, Y. Imai, T. Kameyama,
and K. Fukuda
[J. Mater. Sci., Vol. 39, pp. 4603-4608, 1995]

A flow of oxygen gas activated by passing through a microwave discharge plasma in a 100 and 200 W field was introduced into a deposition chamber for tantalum oxide deposition by KrF laser photolysis of Ta(OCH3)5, and the change of the non-stoichiometry of deposit was examined under the laser condition of 120 Hz and 200 Jm-2. The stoichiometry of the deposit could be improved to a value of about 90% under the condition of rather low supply rate of Ta(OCH3)5(100mgh-1). An effect of post-treatment laser following chemical vapor deposition (CVD) by KrF laser and/or microwave discharge of oxygen gas was also investigated, and it was found that activated oxygen species formed by KrF laser irradiation in an oxygen gas atmosphere which passed through a microwave discharge was effective in enhancing the oxidation of non-stoichiometric tantalum oxide prepared by KrF laser CVD.

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